MrSeb writes “Hardly a day goes by without a top-level research group announcing some kind of graphene-related breakthrough, but this one’s a biggy: Researchers at the University of Erlangen-Nuremberg, Germany have created high-performance monolithic graphene transistors using a simple lithographic etching process. This could be the missing step that finally paves the way to post-silicon electronics. In theory, according to early demos from the likes of IBM and UCLA, graphene transistors should be capable of switching at speeds between 100GHz and a few terahertz. The problem is, graphene doesn’t have a bandgap — it isn’t a natural semiconductor, like silicon — and so it is proving very hard to build transistors out of the stuff. Until now! The researchers say that current performance “corresponds well with textbook predictions for the cutoff frequency of a metal-semiconductor field-effect transistor,” but they also point out that very simple changes could increase performance ‘by a factor of ~30.’”

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